型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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描述:
NXP PSMN027-100PS 晶体管, MOSFET, N沟道, 37 A, 100 V, 21 mohm, 10 V, 3 V
2797
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描述:
MOSFET N-CH 40V 30A LFPAK
4146
-
描述:
NXP PMR290UNE 晶体管, MOSFET, N沟道, 700 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
9331
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描述:
NXP PMR670UPE 晶体管, MOSFET, P沟道, -480 mA, -20 V, 0.67 ohm, -4.5 V, -800 mV
7324
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描述:
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
2347
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描述:
晶体管, 射频FET, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230
4966
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描述:
RF Power Transistor,1 to 2700MHz, 125W, Typ Gain in dB is 16 @ 2500MHz, 50V, GaN, SOT1822
9976
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描述:
RF MOSFET Transistors MOSFET 1600-2200MHz 10W 28V
6755
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描述:
RF Power Transistor,10 to 600MHz, 300W, Typ Gain in dB is 22 @ 450MHz, 50V, LDMOS, SOT1736
7541
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描述:
RF Power Transistor,2700 to 2900MHz, 320W, Typ Gain in dB is 13.3 @ 2900MHz, 30V, LDMOS, SOT1787
5768
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描述:
Trans RF MOSFET N-CH 68V 5Pin TO-270W T/R
6549
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描述:
RF Power Transistor,700 to 1300MHz, 350W, Typ Gain in dB is 20.7 @ 915MHz, 50V, LDMOS, SOT1825
6196
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描述:
Trans MOSFET N-CH 65V 2Pin Case 465A-06 T/R
4185
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描述:
TO-236AB N-CH 60V 0.265A
5314
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描述:
晶体管, 射频FET, 133 VDC, 1.8 MHz, 2000 MHz, TO-270
4805
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描述:
Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23
4922
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描述:
NXP NX3008CBKV 双路场效应管, MOSFET, N和P沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
4011
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描述:
NXP NX3020NAKS 双路场效应管, MOSFET, 双N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
4829
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描述:
Trans MOSFET N-CH 30V 0.2A 6Pin SOT-666 T/R
3819
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描述:
SOT-666 N-CH 30V 0.2A
1865
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描述:
NX3020 系列 30 V 180 mA 表面贴装 双 N-沟道 Trench MOSFET - TSSOP-6
6045
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描述:
NXP NX3020NAKV 双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
7838
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描述:
NXP NX7002AKW 晶体管, MOSFET, N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.6 V
9282
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描述:
RF Power Transistor,728 to 960MHz, 42W, Typ Gain in dB is 19.1 @ 960MHz, 28V, LDMOS, SOT1736
8498
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描述:
RF Power Transistor,1200 to 1400MHz, 330W, Typ Gain in dB is 18 @ 1400MHz, 50V, LDMOS, SOT1792
5822
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